1180 nm VECSEL with output power beyond 20 W. Issue 1 (1st January 2013)

• Record Type: Journal Article
• Authors: Ranta, S.; Tavast, M.; Leinonen, T.; Van Lieu, N.; Fetzer, G.; Guina, M.
• Is Part Of: Electronics letters. Volume 49:Issue 1(2013)
• Page Start: 59
• Page End: 60
• Publication Date: 2013-01-01
• Subjects: GaInAs‐GaAs‐GaAsP; power -- temperature -- wavelength; diamond -- gallium compounds -- III‐V semiconductors -- indium compounds -- laser cavity resonators -- laser mirrors -- molecular beam epitaxial growth -- optical pumping -- surface emitting lasers -- thermal management (packaging); single chip vertical external cavity surface emitting laser -- VECSEL -- optical pumping -- gain mirror -- molecular beam epitaxy -- intracavity diamond heat spreader -- thermal management -- mount temperature -- pump power -- intracavity birefringent filter -- strain compensated active region -- power 20 W -- temperature 12 degC -- wavelength 1165 nm to 1190 nm -- GaInAs‐GaAs‐GaAsP; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.3450
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The highest power result for an optically‐pumped single‐chip vertical external‐cavity surface‐emitting laser with emission near 1180 nm is reported. The gain mirror was grown by molecular beam epitaxy and incorporated a strain compensated GaInAs/GaAs/GaAsP active region. An intra‐cavity diamond heat spreader was attached to the gain mirror for thermal management. In free‐running operation, the laser emitted more than 20 W at a mount temperature of about 12 °C. The output spectrum was centred between 1165–1190 nm depending on the mount temperature and pump power. By using an intra‐cavity birefringent filter, the full width at half‐maximum linewidth could be narrowed to ≤1 nm and at the same time achieved approximately 14 W of output power near 1178 nm. Moreover, the lasing wavelength could be tuned over more than 40 nm.