Common cathode VCSEL driver in 90 nm CMOS enabling 25 Gbit/s optical connection using 14 Gbit/s 850 nm VCSEL. Issue 4 (1st February 2015)

• Record Type: Journal Article
• Authors: Belfiore, G.; Szilagyi, L.; Henker, R.; Ellinger, F.
• Is Part Of: Electronics letters. Volume 51:Issue 4(2015)
• Page Start: 349
• Page End: 351
• Publication Date: 2015-02-01
• Subjects: surface emitting lasers -- laser cavity resonators -- cathodes -- CMOS integrated circuits -- optical interconnections -- optical design techniques -- electro‐optical devices -- integrated optics -- integrated optoelectronics -- optical modulation; common cathode VCSEL driver -- CMOS -- optical connection -- electrooptical measurements -- vertical cavity surface emitting laser -- power 60 mW -- wavelength 90 nm -- wavelength 850 nm -- bit rate 14 Gbit/s -- bit rate 25 Gbit/s -- output stage configuration -- thin oxide transistors -- breakdown voltage -- power consumption -- modulation current -- bulk CMOS technology; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.4217
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The design and electro‐optical measurements of a 25 Gbit/s common cathode vertical cavity surface‐emitting laser (VCSEL) driver in 90 nm bulk CMOS technology is presented. The driver is bonded to a 14 Gbit/s commercial VCSEL providing both DC and modulation current to the laser. The power consumption including the VCSEL is 60 mW. Since the DC bias of the VCSEL exceeds the breakdown voltage of thin oxide transistors, a novel output stage configuration using isolated wells is proposed. The active area is only 127 × 50 μm.