Low‐temperature‐grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation. Issue 17 (1st August 2020)

• Record Type: Journal Article
• Authors: Tannoury, C.; Billet, M.; Coinon, C.; Lampin, J‐F.; Peytavit, E.
• Is Part Of: Electronics letters. Volume 56:Issue 17(2020)
• Page Start: 897
• Page End: 899
• Publication Date: 2020-08-01
• Subjects: annealing -- gallium arsenide -- photoconducting materials -- carrier lifetime -- III‐V semiconductors; low‐temperature‐grown gallium arsenide photoconductors -- subpicosecond carrier lifetime -- photoresponse -- CW excitation -- photoresponses -- continuous‐wave 1550‐nm‐wavelength illumination -- optical Fabry‐Perot cavity -- post‐growth annealing temperature -- external quantum efficiency -- temperature 450.0 degC -- wavelength 1550.0 nm -- GaAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2020.1116
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The authors show in this Letter that photoconductors based on GaAs grown at low temperatures can exhibit photoresponses as high as 25 mA/W under continuous‐wave 1550‐nm‐wavelength illumination. It is achieved by using an optical Fabry–Pérot cavity in order to improve the external quantum efficiency and by decreasing the post‐growth annealing temperature down‐to 450°C.