Concentration‐Dependent Photoluminescence Properties of Graphene Oxide. Issue 2 (28th December 2020)

• Record Type: Journal Article
• Authors: Li, Guanghao; Ma, Suping; Huang, Zhiyu; Cai, Zhihao; Xiao, Peishuang; Huang, Yi
• Is Part Of: Advanced photonics research. Volume 2:Issue 2(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-12-28
• Subjects: graphene oxide -- induced white light -- tunable photoluminescence -- visible–near infrared photoluminescence; Photonics -- Periodicals; 621.36505
• DOI: 10.1002/adpr.202000045
• Languages: English
• ISSNs: 2699-9293

Abstract

Abstract : Herein, a comprehensive examination of the effect of concentration on graphene oxide (GO) photoluminescence (PL) is presented. It is found that GO exhibits a concentration‐induced redshift and white light PL for GO aqueous dispersions, and displays visible–NIR PL for a 3D GO foam (3DGOF) corresponding to the high‐concentration‐limit of GO. It is deduced that the effect of the coupling between the GO sheets gives rise to the observed redshift, and hopping and tunneling effects result in the saturation of the PL redshift and then the PL quenching. Due to the intense interactions and coupling of the GO sheets, the modification of the GO surface state increases the energy of the π* state and/or makes the high‐energy level appear and therefore gives rise to the blue light component. Consequently, high concentrations of GO aqueous dispersion lead to the appearance of combined white light. For 3DGOF, electron–hole radiation recombination in laser‐induced plasma and GO bandgap may be responsible for the observed visible–NIR PL. Based on its tunable PL in the visible–NIR region of the spectrum and the induced white light PL, GO has huge potential for applications in graphene‐based optoelectronics and biomedicine. Abstract : Tunable, induced white light and visible–NIR photoluminescence properties of graphene oxide are studied. The concentration‐dependent photoluminescence mechanisms are clarified in detail, which contributes to a much better understanding of the electronic processes occurring in graphene oxide and the further development of graphene‐based optoelectronics and related applications.