2.4 GHz CMOS self‐biased power amplifier with embedded diode lineariser. Issue 19 (4th September 2015)

• Record Type: Journal Article
• Authors: Ren, Zhixiong; Zhang, Kefeng; Liu, Lanqi; Liu, Zhenglin; Chen, Xiaofei; Liu, Dongsheng; Zou, Xuecheng
• Is Part Of: Electronics letters. Volume 51:Issue 19(2015)
• Page Start: 1501
• Page End: 1503
• Publication Date: 2015-09-04
• Subjects: semiconductor diodes -- linearisation techniques -- CMOS integrated circuits -- UHF power amplifiers -- power MOSFET -- UHF integrated circuits; gain 32 dB -- size 180 nm -- frequency 2.4 GHz -- power added efficiency -- PAE -- power transistor -- diode‐connected N‐type MOS transistor -- integrated diode lineariser -- CMOS PA -- complementary metal oxide semiconductor -- embedded diode lineariser -- self‐biased power amplifier; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.0917
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A high‐linearity CMOS power amplifier (PA) operating at 2.4 GHz with an integrated diode lineariser is presented. A diode‐connected N‐type MOS transistor is used to increase the V gs of the power transistor as input power increases for linearity improvement. The CMOS PA fabricated in 180 nm CMOS technology achieved 32 dB small signal gain, 30.2 dBm P sat, 28.2 dBm P 1 dB, and a 31.1% peak power added efficiency. By adopting the proposed diode lineariser, the output 1 dB is improved from 24.9 to 28.2 dBm.