Transport‐based equivalent circuit for semiconductor nanoparticle in terahertz frequency range. Issue 1 (1st January 2013)

• Record Type: Journal Article
• Authors: Shen, T.; Hu, Z.; Wong, T.
• Is Part Of: Electronics letters. Volume 49:Issue 1(2013)
• Page Start: 52
• Page End: 54
• Publication Date: 2013-01-01
• Subjects: aggregation -- electric admittance -- electric moments -- nanocomposites -- nanoparticles; charge carrier motion -- lattice polarisation -- semiconductor nanoparticle -- terahertz frequency range -- circuit elements -- electrical property -- generalised admittance -- total induced dipole moment -- aggregation -- composite structures; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.3358
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : By consideration of the physical process of charge carrier motion and lattice polarisation, an equivalent circuit for a semiconductor nano‐particle in the terahertz frequency range is obtained. All circuit elements are of electrical nature and can be directly expressed in terms of material parameters. When the generalised admittance of the circuit is multiplied by the intensity of an externally applied field, the total induced dipole moment of the nanoparticle results, which is in good match to that given by field analysis and simulation. The readily obtained polarisability can serve as the basis of analysis for composite structures and aggregates of which the nanoparticle is a constituent.