Multi‐wavelength channel 1.5 μm and 10 Gb/s EMBH DFB‐LD array module using SAG technology. Issue 22 (8th October 2015)

• Record Type: Journal Article
• Authors: Kwon, O.K.; Oh, S.H.; Kim, K.S.; Lee, C.W.; Leem, Y.A.; Nam, E.S.
• Is Part Of: Electronics letters. Volume 51:Issue 22(2015)
• Page Start: 1771
• Page End: 1772
• Publication Date: 2015-10-08
• Subjects: semiconductor laser arrays -- optical communication equipment -- telecommunication channels -- wavelength division multiplexing -- computer centres -- electron beam lithography -- optical testing; multiwavelength channel -- EMBH DFB‐LD array module -- etched mesa buried heterostructure -- distributed feedback laser diode array -- SAG technology -- selective area growth -- WDM‐based datacentre networks -- gain spectrum -- lasing wavelength -- E‐beam lithography -- operation current and parasitic capacitance -- threshold current -- side mode suppression -- transmission test -- clear eye opening -- dynamic extinction ratio -- bit rate 10 Gbit/s -- wavelength 1.5 mum -- current 50 mA -- distance 2 km; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.3000
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A multi‐wavelength channel distributed feedback laser diode array (DFB‐LDA) for the low‐cost and low‐power consumption applications of WDM‐based datacentre networks is reported. The gain spectrum and lasing wavelength of each channel are controlled by using selective area growth and E‐beam lithography techniques, respectively. To reduce the operation current and parasitic capacitance of the proposed array, an etched mesa buried hetero‐structure (EMBH) is introduced. From this study, it was found that an eight‐channel 300 μm long λ /4‐shifted DFB‐LDA has a threshold current of 10 ± 1.5 mA and a side mode suppression ratio of over 50 dB at a current of 50 mA for all channels. A transmission test for this LDA showed a clear eye opening with a dynamic extinction ratio of over 4.5 dB at 10 Gb/s after a 2 km transmission.