Observation of spontaneous Raman scattering in hydrogenated amorphous silicon wire waveguide at 1.55 µm. Issue 9 (1st April 2013)

• Record Type: Journal Article
• Authors: Tanizawa, K.; Suda, S.; Sakakibara, Y.; Kamei, T.; Takei, R.; Kawashima, H.; Namiki, S.; Mori, M.; Ishikawa, H.
• Is Part Of: Electronics letters. Volume 49:Issue 9(2013)
• Page Start: 610
• Page End: 612
• Publication Date: 2013-04-01
• Subjects: amorphous semiconductors -- optical pumping -- optical waveguides -- Raman spectra -- silicon; spontaneous Raman scattering -- hydrogenated amorphous silicon wire waveguide -- carrier decay time -- optical pump -- Raman frequency shift -- Raman gain coefficient -- wavelength 1.55 nm -- size 13 mm -- wavelength 1.44 nm -- frequency 14.3 THz; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.0461
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Reported is the measurement of spontaneous Raman scattering in a 13 mm‐long hydrogenated amorphous silicon wire waveguide with ultrafast carrier decay time. Broad Raman emission with a peak wavelength of 1.55 µm was observed for a pump wavelength of 1.44 µm. The Raman frequency shift is 14.3 THz, and Raman gain coefficient is estimated to be 0.15 W − 1 cm − 1 .