Fully transparent flexible dual‐layer channel Ga‐doped ZnO thin‐film transistors on plastic substrates. Issue 14 (1st July 2015)

• Record Type: Journal Article
• Authors: Han, Dedong; Huang, Fuqing; Cong, Yingying; Huang, Lingling; Zhang, Yi; Shi, Pan; Yu, Wen; Zhou, Xiaoliang; Liu, Lifeng; Zhang, Shengdong; Zhang, Xing; Wang, Yi
• Is Part Of: Electronics letters. Volume 51:Issue 14(2015)
• Page Start: 1069
• Page End: 1071
• Publication Date: 2015-07-01
• Subjects: zinc compounds -- gallium -- thin film transistors -- semiconductor device manufacture -- semiconductor thin films -- flexible displays; fully transparent flexible dual‐layer channel -- thin‐film transistors -- plastic substrates -- thin films -- radio‐frequency sputtering -- electrical properties -- mechanical flexibility -- optical transparency -- flexible displays -- temperature 293 K to 298 K -- voltage 3.2 V -- ZnO:Ga; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.0582
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Fully transparent dual‐layer Ga‐doped zinc oxide (GZO) thin‐film transistors (TFTs) were fabricated on flexible plastic substrate by room temperature processes. The GZO thin films are deposited by radio‐frequency sputtering according to the variation of the depositing time in order to optimise the performance of GZO TFTs. The results show that dual‐layer GZO TFTs exhibit excellent electrical properties, mechanical flexibility and optical transparency. A saturation mobility μ s of 350 cm 2 /V.s, a linear field effect mobility of 281 cm 2 /V.s, a threshold voltage V TH of 3.2 V, a steep subthreshold swing of 268 mV/decade, a low off‐state current value ( I OFF ) of 1.5 × 10 −11 A and a high on/off ratio of about 10 8 were extracted. The TFTs also have admirable transparency with an average visible transmittance of 87.2%. These results indicate that GZO material is suitable for the next generation flexible displays.