Characterisation and analytical modelling of GaN HEMT‐based varactor diodes. Issue 23 (1st November 2015)

• Record Type: Journal Article
• Authors: Hamdoun, A.; Roy, L.; Himdi, M.; Lafond, O.
• Is Part Of: Electronics letters. Volume 51:Issue 23(2015)
• Page Start: 1930
• Page End: 1932
• Publication Date: 2015-11-01
• Subjects: varactors -- high electron mobility transistors -- microwave diodes -- gallium compounds -- III‐V semiconductors -- wide band gap semiconductors -- microwave field effect transistors -- equivalent circuits; HEMT based varactor diodes -- small signal measurements -- physical equivalent circuit -- size 0.5 mum -- size 0.15 mum -- GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.2362
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Varactor diodes fabricated in 0.5 and 0.15 µm GaN HEMT (high‐electron‐mobility transistor) processes are modelled. The devices were characterised via DC and RF small‐signal measurements up to 20 GHz, and fitted to a simple physical equivalent circuit. Approximate analytical expressions containing empirical coefficients are introduced for the voltage dependency of capacitance and series resistance. The analytical solutions agree remarkably well with the experimentally extracted C–V curves and can be used as a general model to represent the nonlinear behaviour of GaN‐based varactors devices.