Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro‐LEDs. Issue 4 (1st February 2015)

• Record Type: Journal Article
• Authors: Akhter, M.; Pampili, P.; Zubialevich, V.Z.; Eason, C.; Quan, Z.H.; Maaskant, P.P.; Parbrook, P.J.; Corbett, B.
• Is Part Of: Electronics letters. Volume 51:Issue 4(2015)
• Page Start: 354
• Page End: 355
• Publication Date: 2015-02-01
• Subjects: light emitting diodes -- electroluminescence -- aluminium compounds -- gallium compounds -- wide band gap semiconductors -- III‐V semiconductors -- semiconductor quantum wells -- semiconductor growth -- etching; modulation bandwidth -- bandwidth measurements -- DUV EL -- deep ultraviolet microLED electroluminescence -- multiple quantum well aluminium gallium nitride -- MQW -- LED structure -- sapphire substrate -- wafer surface etching -- light emission -- wavelength 250 nm -- AlGaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.4253
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Bandwidth measurements of deep ultra‐violet micro‐light‐emitting diode (LED) electroluminescence centred at 250 nm using a multiple quantum well aluminium gallium nitride (AlGaN)‐based LED structure grown on a sapphire substrate is presented. By controlled etching of the wafer surface, parabolically shaped micro‐LED structures were formed to enhance light emission through the substrate. Devices were tested on‐wafer and bandwidth measurements were carried out on individual emission peaks from the devices. A bandwidth of more than 20 MHz was achieved on the 250 nm peak.