Solar‐blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V. Issue 20 (1st October 2015)

• Record Type: Journal Article
• Authors: Brendel, M.; Helbling, M.; Knigge, A.; Brunner, F.; Weyers, M.
• Is Part Of: Electronics letters. Volume 51:Issue 20(2015)
• Page Start: 1598
• Page End: 1600
• Publication Date: 2015-10-01
• Subjects: aluminium compounds -- gallium compounds -- III‐V semiconductors -- wide band gap semiconductors -- metal‐semiconductor‐metal structures -- photodetectors -- ultraviolet detectors -- lighting; AlGaN -- voltage 0 V -- efficiency 24 percent -- wavelength 240 nm -- internal gain mechanism -- dark current -- illumination -- zero‐bias external quantum efficiency -- solar‐blind metal–semiconductor–metal photodetector -- asymmetric metallisation scheme -- solar‐blind AlGaN MSM photodetectors; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.2364
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : By utilising an asymmetric metallisation scheme to fabricate an AlGaN‐based solar‐blind metal–semiconductor–metal photodetector, a zero‐bias external quantum efficiency (EQE) of 24% for illumination at 240 nm wavelength from the substrate side was obtained. Moreover, an asymmetric bias‐dependence of dark current and EQE is observed. The EQE saturates at about 38% in reverse direction, whereas in forward direction the presence of an internal gain mechanism is indicated.