3–10 GHz self‐biased resistive‐feedback LNA with inductive source degeneration. Issue 6 (1st March 2013)

• Record Type: Journal Article
• Authors: Feng, C.; Yu, X. P.; Lu, Z. H.; Lim, W. M.; Sui, W. Q.
• Is Part Of: Electronics letters. Volume 49:Issue 6(2013)
• Page Start: 387
• Page End: 388
• Publication Date: 2013-03-01
• Subjects: current -- frequency -- noise figure -- size -- voltage; CMOS analogue integrated circuits -- feedback amplifiers -- low noise amplifiers -- microwave amplifiers -- microwave integrated circuits -- wideband amplifiers; self‐biased resistive‐feedback LNA -- inductive source degeneration technique -- low‐noise amplifier -- Global Foundries CMOS process -- input‐matching network -- resistive feedback -- wideband matching -- frequency 3 GHz to 10 GHz -- size 65 nm -- noise figure 3.5 dB to 4.3 dB -- current 12 mA -- voltage 1.2 V; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.4472
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A 3–10 GHz self‐biased low‐noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input‐matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The LNA exhibits a power gain of 17 ± 1 dB over 3–10 GHz with noise figure ranging from 3.5 to 4.3 dB. The fabricated LNA occupies an area of 0.15 mm 2 and draws 12 mA from 1.2 V power supply.