Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode. Issue 5 (1st March 2016)

• Record Type: Journal Article
• Authors: Butera, S.; Vines, P.; Tan, C.H.; Sandall, I.; Buller, G.S.
• Is Part Of: Electronics letters. Volume 52:Issue 5(2016)
• Page Start: 385
• Page End: 386
• Publication Date: 2016-03-01
• Subjects: indium compounds -- laser ranging -- avalanche photodiodes -- optical radar; picosecond laser ranging -- indium arsenide avalanche photodiode -- time‐of‐flight measurement -- pulsed laser illumination -- wavelength region -- indium arsenide APD -- electron multiplication reducing detector noise -- sensitive optical measurements -- picosecond transients -- mid‐wave infrared -- laboratory‐based demonstration -- time‐of‐flight ranging -- LIDAR measurement -- InAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.3995
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Time‐of‐flight measurements using pulsed laser illumination in the wavelength region between 1.3 to 2.37 μm have been demonstrated with an InAs avalanche photodiode (APD). InAs is photo‐sensitive at wavelengths up to 3.5 μm and with predominantly electron multiplication reducing detector noise, InAs APDs have clear potential for sensitive optical measurements of picosecond transients in the mid‐wave infrared. Laboratory‐based demonstrations of time‐of‐flight ranging using InAs APDs operated at room temperature is described.