A comprehensive analysis of the (√13  ×  √13)R13.9° type II structure of silicene on Ag(1 1 1). (20th April 2016)

• Record Type: Journal Article
• Authors: Jamgotchian, H; Ealet, B; Maradj, H; Hoarau, J-Y; Bibérian, J-P; Aufray, B
• Is Part Of: Journal of physics. Volume 28:Number 19(2016)
• Publication Date: 2016-04-20
• Subjects: silicene -- Ag(1 1 1) -- superstructure -- Moiré pattern -- periodic deformation -- strain relaxation; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/0953-8984/28/19/195002
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: In this paper, using the same geometrical approach as for the (2 √ 3 × 2 √ 3) R 30° structure (Jamgotchian et al 2015 J. Phys.: Condens. Matter 27 395002), for the (√13 × √13) R 13.9° type II structure, we propose an atomic model of the silicene layer based on a periodic relaxation of the strain epitaxy. This relaxation creates periodic arrangements of perfect areas of (√13 × √13) R 13.9° type II structure surrounded by defect areas. A detailed analysis of the main published experimental results, obtained by scanning tunneling microscopy and by low energy electron diffraction, shows a good agreement with the geometrical model.