Vertical organic transistors. (14th October 2015)

• Record Type: Journal Article
• Authors: Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl
• Is Part Of: Journal of physics. Volume 27:Number 44(2015)
• Publication Date: 2015-10-14
• Subjects: organic electronics -- organic transistors -- organic static induction transistor -- organic permeable base transistor -- organic step-edge transistor -- vertical organic field-effect transistor; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/0953-8984/27/44/443003
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub- μ m structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.