Finger-gate manipulated quantum transport in Dirac materials. (6th May 2015)

• Record Type: Journal Article
• Authors: Kleftogiannis, Ioannis; Tang, Chi-Shung; Cheng, Shun-Jen
• Is Part Of: Journal of physics. Volume 27:Number 20(2015)
• Publication Date: 2015-05-06
• Subjects: quantum transport -- Dirac materials -- evanescent scattering; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/0953-8984/27/20/205302
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: We investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow the electrons to make intra-subband transitions via hole-like or electron-like quasibound states (QBS), respectively, resulting in dips in the conductance. In the high energy regime, double dip structures in the conductance are found, attributed to spin-flip or spin-nonflip inter-subband transitions through the QBSs. Inverting the finger-gate polarity offers the possibility to manipulate the spin polarized electronic transport to achieve a controlled spin-switch.