Recent progress and futuristic development of PbSe thermoelectric materials and devices. (September 2018)

• Record Type: Journal Article
• Authors: Gayner, Chhatrasal; Kar, Kamal K.; Kim, Woochul
• Is Part Of: Materials today energy. Volume 9(2018)
• Page Start: 359
• Page End: 376
• Publication Date: 2018-09
• Subjects: Thermoelectrics -- Semiconductor -- PbSe -- Electrical and thermal transport; Energy development -- Periodicals; Energy industries -- Periodicals; Power resources -- Periodicals; Energy policy -- Periodicals; Energy development; Energy industries; Energy policy; Power resources; Electronic journals; Periodicals; 621.042
• DOI: 10.1016/j.mtener.2018.06.010
• Languages: English
• ISSNs: 2468-6069

Abstract

Abstract: Exploring highly efficient thermoelectric materials to address energy generation is the current area of interest. Fundamentals of materials science, the behavior of materials, strategies, designing the structural/microstructural architects are studied so far in a wide range of material. However, due to the scarcity of Te/Ge in the earth crust, development of alternative materials with improved thermoelectric performance is required to make a highly efficient thermoelectric device for the large-scale applications. The developments are pointing the efficient performance of PbSe, and have been overcome the problem arises to obtain both n and p-type legs from a single material. Therefore, it must be important to place all current developments in the form of solid review. This review updates recent advances in high-performance bulk PbSe. The renaissance has been attained through doping, nanostructuring, engineering of band structure, microstructural architects and atomic arrangements via vacancy/dislocation ornaments. The structure-property relationship, the influence of doping, dislocations at atomic scales, and carriers/phonons transport are discussed to understand the exciting material's physics. Further possible device level abilities are also discussed for the futuristic developments. Graphical abstract: Image 1 Highlights: Recent developments of PbSe are discussed. Structure-property relationship, influence of doping, impact of dislocations and carriers/phonons transport are discussed. Concept of doping, nanostructuring, band engineering, vacancy engineering, vacancy/dislocation ornaments are briefly correlated. Further possible device level abilities are also discussed for the futuristic developments.