Cite
HARVARD Citation
Sato, T. et al. (n.d.). Homoepitaxial growth of GaN crystals by Na-flux dipping method. Japanese journal of applied physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Sato, T. et al. (n.d.). Homoepitaxial growth of GaN crystals by Na-flux dipping method. Japanese journal of applied physics. p. . [Online].