Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors. (9th September 2016)

• Record Type: Journal Article
• Authors: Stoesser, Anna; von Seggern, Falk; Purohit, Suneeti; Nasr, Babak; Kruk, Robert; Dehm, Simone; Di Wang, ; Hahn, Horst; Dasgupta, Subho
• Is Part Of: Nanotechnology. Volume 27:Number 41(2016)
• Publication Date: 2016-09-09
• Subjects: nanowires -- oxide semiconductors -- field-effect transistors -- polypyrrole -- MOSFETs -- copper oxide; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/41/415205
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2 O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm 2 V −1 s −1 .