Cite
HARVARD Citation
Reinhardt, A. et al. (2021). All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride. Advanced Electronic Materials. p. n/a. [Online].
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Reinhardt, A. et al. (2021). All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride. Advanced Electronic Materials. p. n/a. [Online].