Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier. (9th February 2021)

• Record Type: Journal Article
• Authors: Zhang, Xiaoyue; Tang, Ning; Yang, Liuyun; Fang, Chi; Wan, Caihua; Liu, Xingchen; Zhang, Shixiong; Zhang, Yunfan; Wang, Xinqiang; Lu, Yuan; Ge, Weikun; Han, Xiufeng; Shen, Bo
• Is Part Of: Advanced functional materials. Volume 31:Number 15(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-02-09
• Subjects: AlN tunnel barrier -- AlN/GaN heterostructures -- spin injection -- 2D electron gas; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202009771
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: The spin injection into 2D electron gas (2DEG) in AlN/GaN heterostructures is studied by magneto‐transport measurements. An ultrathin AlN layer at the hetero‐interface acts as a barrier to form high‐quality 2DEG in the triangular quantum well and a tunneling barrier for the spin injection to overcome the conductance mismatch issue. In this study, Hanle signals and inversed Hanle signals are observed, proving that the spin injection is achieved in the 2DEG in the AlN/GaN heterostructure rather than in the interfacial states. The spin‐relaxation time in 2DEG at 8 K is found to be as long as 860 ps, which almost keeps constant with bias and decreases with increasing temperature. The spin‐relaxation process is illustrated as Rashba spin‐orbit coupling dominated D'yakonov Perel' mechanisms above 8 K. These results show the promising potential of 2DEG in AlN/GaN heterostructures for spin field‐effect transistor applications. Abstract : Spin injection is achieved in the 2D electron gas in AlN/GaN heterostructures with the observation of Hanle and inversed Hanle signals. Further measurements are conducted with changing bias current and temperature, which illustrates the Rashba spin‐orbit coupling dominated D'yakonov Perel' spin relaxation mechanisms. The spin‐relaxation time in 2DEG at 8 K is found to be as long as 860 ps.