Programmable a-InGaZnO gate array with laser-induced forward transfer. (18th March 2021)

• Record Type: Journal Article
• Authors: Jo, Youngmin; Kwon, Jimin; van der Steen, Jan-Laurens; Kronemeijer, Auke Jisk; Jung, Sungjune
• Is Part Of: Flexible and printed electronics. Volume 6:Number 1(2021)
• Publication Date: 2021-03-18
• Subjects: gate array -- thin-film circuit fabrication -- metal oxide semiconductor -- printed electronics -- flexible; Flexible electronics -- Periodicals; Printed electronics -- Periodicals; Flexible electronics; Printed electronics; Electronic journals; Periodicals; 621.381
• DOI: 10.1088/2058-8585/abe653
• Languages: English
• ISSNs: 2058-8585

Abstract

Abstract: Here, we present a pseudo-CMOS NOR gate array based on dual-gate amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) on plastic. We fabricated a 14 × 12 array of NOR gates which was programmed using laser-induced forward transfer printing technology to realize a negative-edge-triggered D flip-flop. Two drive transistors in a conventional NOR gate configuration were replaced by a single independently gate-controlled dual-gate transistor, which enabled us to design and fabricate a gate array with much reduced number of transistors and interconnects. We anticipate that programmable gate arrays based on dual-gate oxide TFTs can be a new route to design and fabrication of digital circuitry that will be essential for emerging applications Internet-of-Things and wearable electronics.