Excellent nonlinearity of a selection device based on anti-series connected Zener diodes for ultrahigh-density bipolar RRAM arrays. (30th September 2015)

• Record Type: Journal Article
• Authors: Li, Yingtao; Li, Rongrong; Fu, Liping; Gao, Xiaoping; Wang, Yang; Tao, Chunlan
• Is Part Of: Nanotechnology. Volume 26:Number 42(2015)
• Publication Date: 2015-09-30
• Subjects: crossbar array -- selection device -- anti-series connected zener diodes -- bipolar RRAM; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/42/425201
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: A crossbar array is usually used for the high-density application of a resistive random access memory (RRAM) device. However, the cross-talk interference limits the increase in the integration density. In this paper, anti-series connected Zener diodes as a selection device are proposed for bipolar RRAM arrays. Simulation results show that, by using the anti-series connected Zener diodes as a selection device, the readout margin is sufficiently improved compared to that obtained without a selection device or with anti-parallel connected diodes as the selection device. The maximum size of the crossbar arrays with anti-series connected Zener diodes as a selection device over 1 TB is estimated by theoretical simulation. In addition, the feasibility of using the anti-series connected Zener diodes as a selection device for bipolar RRAM is demonstrated experimentally. These results indicate that anti-series connected Zener diodes as a selection device opens up great opportunities to realize ultrahigh-density bipolar RRAM arrays.