Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods. (4th March 2015)

• Record Type: Journal Article
• Authors: Zhang, Guogang; Zhuang, Zhe; Guo, Xu; Ren, Fang-Fang; Liu, Bin; Ge, Haixiong; Xie, Zili; Sun, Ling; Zhi, Ting; Tao, Tao; Li, Yi; Zheng, Youdou; Zhang, Rong
• Is Part Of: Nanotechnology. Volume 26:Number 12(2015)
• Publication Date: 2015-03-04
• Subjects: Bloch surface plasmons -- light-emitting diodes -- photoluminescence; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/12/125201
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.