Empirical model for the velocity-field characteristics of semiconductors exhibiting negative differential mobility. (September 2019)

• Record Type: Journal Article
• Authors: Siddiqua, Poppy; Wang, Yana; Shur, Michael S.; O'Leary, Stephen K.
• Is Part Of: Solid state communications. Volume 299(2019)
• Publication Date: 2019-09
• Subjects: Solid state chemistry -- Periodicals; Solid state physics -- Periodicals; Chimie de l'état solide -- Périodiques; Physique de l'état solide -- Périodiques; 530.41
• DOI: 10.1016/j.ssc.2019.113658
• Languages: English
• ISSNs: 0038-1098

Abstract

Abstract: An empirical model for the velocity-field characteristic of a semiconductor exhibiting a peak and a region of negative differential mobility is proposed. The adjustable parameters in this model are shown to be directly determinable from the form of the velocity-field characteristic itself, rather than being resolvable through the use of a trial-and-error approach. The model is then applied to a classical compound semiconductor of interest, namely gallium arsenide. Through a direct comparison with results acquired through the use of Monte Carlo electron transport simulations, the strengths and weaknesses of this model are critically assessed. Highlights: Empirical model for the velocity-field characteristic of a semiconductor that takes into account the negative differential mobility. Internal adjustable parameters associated with this model are shown to be directly related with the form of the velocity-field characteristics. Contrasted the fit acquired through the use of this model with that determined from Monte Carlo electron transport simulations for the specific case of gallium arsenide.