Carbon saturation of silicon target under the action of pulsed high-intensity ion beam. Issue 1 (January 2016)

• Record Type: Journal Article
• Authors: Aktaev, N E; Remnev, G E
• Is Part Of: IOP conference series. Volume 110:Issue 1(2016)
• Publication Date: 2016-01
• Subjects: Materials science -- Periodicals; 620.1105
• DOI: 10.1088/1757-899X/110/1/012054
• Languages: English
• ISSNs: 1757-8981

Abstract

Abstract: The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.