Performance enhancement of pentacene and F16CuPc-based low-voltage devices using cross-linked blend gate dielectrics. (13th January 2015)

• Record Type: Journal Article
• Authors: Shin, Eun-Sol; Oh, Jeong-Do; Kim, Dae-Kyu; Ha, Young-Geun; Choi, Jong-Ho
• Is Part Of: Journal of physics. Volume 48:Number 4(2015)
• Publication Date: 2015-01-13
• Subjects: ZrOx dielectrics -- cross-linked ZrOx/1, 6-bis(trimethoxysily)hexane blend -- complementary inverter -- neutral cluster beam deposition method; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/48/4/045105
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Herein is reported the fabrication and systematic comparative analysis of low-voltage organic filed-effect transistors (OFETs) and inverters using bare ZrO x dielectrics and inorganic–organic hybrid CZB (cross-linked ZrO x /1, 6-bis(trimethoxysily)hexane blend) dielectrics. Solution-processed sol–gel chemistry was employed to prepare the gate dielectrics. Two active layers of p -type pentacene and n -type copper hexadecafluorophthalocyanine (F16 CuPc) were deposited on the dielectrics using the neutral cluster beam deposition method. Compared with bare ZrO x -based transistors and inverters, the CZB-based devices with low leakage current and high capacitance exhibited significantly higher hole and electron carrier mobilities of (0.12 → 1.03) and (1.3 × 10 −3 → 4.9 × 10 −3 ) cm 2 (Vs) −1, respectively, and enhanced gains of (9.4 → 13.3), together with large output voltage swings and sharp inversions in the voltage transfer characteristics ( VTC s). The CZB-based inverters also exhibited improved noise margins due to the higher gain and better symmetry of the VTC s compared with their bare ZrO x -based counterparts. The results indicate that on the basis of the enhanced electrical properties of CZB dielectrics and the growth of high-quality crystalline semiconducting films on CZB dielectric surfaces, such high-performance devices operating at low voltage levels are promising potential components for integrated circuits.