Fundamental insights into the threshold characteristics of organic field-effect transistors. (5th January 2015)

• Record Type: Journal Article
• Authors: Jung, Sungyeop; Kim, Chang-Hyun; Bonnassieux, Yvan; Horowitz, Gilles
• Is Part Of: Journal of physics. Volume 48:Number 3(2015)
• Publication Date: 2015-01-05
• Subjects: organic field-effect transistors (OFETs) -- numerical simulation -- threshold characteristics; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/48/3/035106
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We physically model the threshold characteristics of organic field-effect transistors (OFETs) using a two-dimensional finite-element method. The transfer characteristics are simulated for staggered OFETs with various electronic structures. A reliable method to extract a structure-unique threshold voltage is presented based on the second-derivative method. By changing the hole injection barrier height in such a manner that the flat-band voltage, defined from the difference of Fermi levels of gate and source electrode, is kept constant, we demonstrate a direct impact of the hole injection barrier height on the threshold voltage. Simulated charge carrier distribution shows the two-dimensional nature of channel creation process and physical insights into the threshold characteristics of OFETs.