Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy. (2nd February 2015)

• Record Type: Journal Article
• Authors: Peters, J A; Liu, Z; Im, J; Nguyen, S; Sebastian, M; Freeman, A J; Kanatzidis, M G; Wessels, B W
• Is Part Of: Journal of physics. Volume 48:Number 7(2015)
• Publication Date: 2015-02-02
• Subjects: deep level defects -- PICTS -- radiation detectors; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/48/7/075303
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Defect levels in semi-insulating Tl6 I4 S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059 ± 0.007), (0.13 ± 0.012), (0.31 ± 0.074), (0.39 ± 0.019), (0.62 ± 0.110), and (0.597 ± 0.105). These defect levels are attributed to vacancies (V I, V S ) and antisite defects (I S, Tl S, Tl I ) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements.