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HARVARD Citation
Wakejima, A. et al. (n.d.). Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer. Applied physics express. p. . [Online].
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Wakejima, A. et al. (n.d.). Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer. Applied physics express. p. . [Online].