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HARVARD Citation
Meng, J. et al. (n.d.). Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories. Japanese journal of applied physics. p. . [Online].
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Meng, J. et al. (n.d.). Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories. Japanese journal of applied physics. p. . [Online].