Chemical doping of MoS2 multilayer by p-toluene sulfonic acid. Issue 3 (4th June 2015)

• Record Type: Journal Article
• Authors: Andleeb, Shaista; Kumar Singh, Arun; Eom, Jonghwa
• Is Part Of: Science and technology of advanced materials. Volume 16:Issue 3(2015)
• Publication Date: 2015-06-04
• Subjects: molybdenum disulfide -- field-effect transistor -- p-toluene sulfonic acid -- doping; Materials -- Technological innovations -- Periodicals; 620.112
• DOI: 10.1088/1468-6996/16/3/035009
• Languages: English
• ISSNs: 1468-6996

Abstract

Abstract: We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS2 ) by chemical doping. Electrical charge transport and Raman spectroscopy measurements revealed that the p-toluene sulfonic acid (PTSA) imposes n-doping in ML MoS2 . The shift of threshold voltage for ML MoS2 transistor was analyzed as a function of reaction time. The threshold voltage shifted toward more negative gate voltages with increasing reaction time, which indicates an n-type doping effect. The shift of the Raman peak positions was also analyzed as a function of reaction time. PTSA treatment improved the field-effect mobility by a factor of ~4 without degrading the electrical characteristics of MoS2 devices.