PiN InGaN nanorod solar cells with high short-circuit current. (26th March 2015)

• Record Type: Journal Article
• Authors: Cansizoglu, Mehmet F.; Hamad, Samir M.; Norman, Dever P.; Keles, Filiz; Badraddin, Emad; Karabacak, Tansel; Seo, Hye-Won
• Is Part Of: Applied physics express. Volume 8:Number 4(2015:Apr.)
• Publication Date: 2015-03-26
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.8.042302
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report on the photovoltaic characteristics of molecular beam epitaxy-grown PiN InGaN nanorod solar cells. The glancing angle deposition process was adapted to grow continuous transparent metal layers on discontinuous nanorods. A short-circuit current density of 4.6 mA/cm 2 and an open-circuit voltage of 0.22 V with a power conversion efficiency of 0.5% under 1 sun, air-mass 1.5, illumination were observed. The excellent light-generated current in the InGaN nanorod solar cells is considered to stem from the improved crystal quality owing to the strain-free nature as well as the enhanced light concentration effects in the nanorod configuration.