Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture. (6th March 2015)

• Record Type: Journal Article
• Authors: Megalini, Ludovico; Becerra, Daniel L.; Farrell, Robert M.; Pourhashemi, A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Cohen, Daniel A.
• Is Part Of: Applied physics express. Volume 8:Number 4(2015:Apr.)
• Publication Date: 2015-03-06
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.8.042701
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CA-LDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-µm-wide active region were 4.4 (8.1) kA/cm 2, 6.1 (7.7) V, 96.5 (63.5) mW, and 4.7 (6.0) Ω under pulsed conditions and before facet coating, respectively.