Cite
HARVARD Citation
Lee, J. et al. (n.d.). Etching characteristics of SiC, SiO2, and Si in CF4/CH2F2/N2/Ar inductively coupled plasma: Effect of CF4/CH2F2 mixing ratio. Japanese journal of applied physics. p. . [Online].
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Lee, J. et al. (n.d.). Etching characteristics of SiC, SiO2, and Si in CF4/CH2F2/N2/Ar inductively coupled plasma: Effect of CF4/CH2F2 mixing ratio. Japanese journal of applied physics. p. . [Online].