Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile. (12th September 2016)

• Record Type: Journal Article
• Authors: Wei, Sufen; Zhang, Guohe; Shao, Zhibiao; Huang, Huixiang; Geng, Li
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 10(2016:Oct.)
• Publication Date: 2016-09-12
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.104201
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We verify that one-dimensional (1D) Gaussian expression is an appropriate approximation of the vertical doping profile, which is obtained by combining perpendicular ion implantation and rapid thermal annealing (RTA), for short-channel thin-body (20–30 nm) fully depleted (FD) silicon-on-insulator (SOI) MOSFETs. The two-dimensional (2D) potential distribution of the silicon film is derived by adopting the evanescent mode analysis method, in which the potential function is broken into 1D long-channel and 2D short-channel potentials. The threshold voltage model is represented by the minimum front- and back-surface potentials of the silicon film. The application of the threshold voltage model can be extended to a 12 nm channel length. The results obtained using the models match well with the 2D numerical simulation results obtained using the Synopsys Sentaurus Device™. They provide a feasible way of developing new 2D models for nonuniform nanoscale thin-body FD-SOI devices.