Electroluminescence at 1.3 µm from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition. (15th September 2016)

• Record Type: Journal Article
• Authors: Rajesh, Mohan; Nishioka, Masao; Arakawa, Yasuhiko
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 10(2016:Oct.)
• Publication Date: 2016-09-15
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.100304
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We report the first demonstration of electroluminescence at 1.3 µm from InAs/GaAs quantum dots (QDs) monolithically grown on a Ge/Si substrate by metal organic chemical vapor deposition (MOCVD). High-density coalescence-free InAs/Sb:GaAs QDs emitting at 1.3 µm were obtained on a GaAs/Ge/Si wafer. The post-growth annealing of the GaAs buffer layer shows a significant improvement in the room-temperature (RT) photoluminescence (PL) intensity of QDs grown on a GaAs/Ge/Si wafer, comparable to those QDs grown on a reference GaAs substrate. Together, these results are promising for the realization of a QD laser on a Si substrate by MOCVD for silicon photonics application.