Room-temperature laser annealing for solid-phase epitaxial crystallization of β-Ga2O3 thin films. (23rd September 2016)

• Record Type: Journal Article
• Authors: Shiojiri, Daishi; Fukuda, Daiji; Yamauchi, Ryosuke; Tsuchimine, Nobuo; Koyama, Koji; Kaneko, Satoru; Matsuda, Akifumi; Yoshimoto, Mamoru
• Is Part Of: Applied physics express. Volume 9:Number 10(2016:Oct.)
• Publication Date: 2016-09-23
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.9.105502
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: The epitaxial crystallization of β-Ga2 O3 thin films on NiO-buffered α-Al2 O3 (0001) substrates via the solid-phase crystallization of amorphous Ga2 O3 thin films by KrF excimer laser annealing at room temperature (RT) was examined. The results of X-ray and reflection high-energy electron diffraction measurements indicated that the epitaxial β-Ga2 O3 thin films were fabricated by RT laser annealing. The optical bandgap of the thin films was estimated to be 4.9 eV from the results of UV/vis transmittance measurements. In the cathodoluminescence spectrum, UV–green luminescence was observed for the thin films. These optical properties are similar to those of bulk β-Ga2 O3 .