Local atomic structure analysis of SiC interface with oxide using chemical-state-selective X-ray absorption spectroscopy. (23rd September 2016)

• Record Type: Journal Article
• Authors: Isomura, Noritake; Murai, Takaaki; Oji, Hiroshi; Nomoto, Toyokazu; Watanabe, Yukihiko; Kimoto, Yasuji
• Is Part Of: Applied physics express. Volume 9:Number 10(2016:Oct.)
• Publication Date: 2016-09-23
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.9.101301
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A local atomic structure analysis of the interface between chemical vapor-deposited SiO2 and 4H-SiC was achieved via a combination of chemical-state-selective X-ray absorption spectroscopy and the use of a sample with a very thin oxide film. The Si K-edge spectrum, which monitors the SiC-assigned Auger peak, allows the SiC side of the SiO2 /SiC interface to be selectively measured through the SiO2 film. We estimate the coordination number of the first nearest neighbor to be reduced by 17% with respect to the SiC bulk. This suggests that C vacancy defects exist at the SiC side of the interface.