N-type conduction in SnS by anion substitution with Cl. (22nd April 2016)

• Record Type: Journal Article
• Authors: Yanagi, Hiroshi; Iguchi, Yuki; Sugiyama, Taiki; Kamiya, Toshio; Hosono, Hideo
• Is Part Of: Applied physics express. Volume 9:Number 5(2016:May)
• Publication Date: 2016-04-22
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.9.051201
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Relatively nontoxic, earth-abundant Cl was incorporated into n-type SnS as a dopant. The existence of impurity phases was carefully identified in Sn(S1− x − y Cl x )-dense ceramics. The highest electron mobility (8.3 cm 2 V −1 s −1 ) in n-type conduction was achieved in samples with x ≥ 0.005. Cl concentration is critical for conduction-type conversion, whereas carrier density and electron mobility are determined by sulfur-site deficiency. Carrier transport is explained by grain boundary potential barrier scattering in undoped p-type samples and by ionized impurity scattering in Cl-doped n-type samples.