Degradation mechanism of perovskite CH3NH3PbI3 diode devices studied by electroluminescence and photoluminescence imaging spectroscopy. (2nd October 2015)

• Record Type: Journal Article
• Authors: Okano, Makoto; Endo, Masaru; Wakamiya, Atsushi; Yoshita, Masahiro; Akiyama, Hidefumi; Kanemitsu, Yoshihiko
• Is Part Of: Applied physics express. Volume 8:Number 10(2015:Oct.)
• Publication Date: 2015-10-02
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.8.102302
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We investigate the degradation behavior of non-sealed perovskite CH3 NH3 PbI3 diode devices in air at room temperature by means of electroluminescence (EL) and photoluminescence (PL) imaging techniques. From the comparison of these images, we determine that the spatial fluctuation of the EL intensity is mainly due to fluctuations in the luminescence efficiency of the perovskite layer itself. By applying a constant voltage for tens of minutes, the EL intensity decreases gradually. It is observed that the temporal evolution of the EL intensity is governed by the degradation of the perovskite layer and the carrier injection at the interface.