Enhancement in c-Si solar cells using 16 nm InN nanoparticles. (18th May 2016)

• Record Type: Journal Article
• Authors: Chowdhury, Farsad Imtiaz; Alnuaimi, Aaesha; Alkis, Sabri; Ortaç, Bülend; Aktürk, Selçuk; Alevli, Mustafa; Dietz, Nikolaus; Okyay, Ali Kemal; Nayfeh, Ammar
• Is Part Of: Materials research express. Volume 3:Number 5(2016)
• Publication Date: 2016-05-18
• Subjects: solar cells -- photoluminescence -- downshifting -- scattering; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/3/5/056202
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: In this work, 16 nm indium nitride (InN) nanoparticles (NPs) are used to increase the performance of thin-film c-Si HIT solar cells. InN NPs were spin-coated on top of an ITO layer of c-Si HIT solar cells. The c-Si HIT cell is a stack of 2 μ m p type c-Si, 4–5 nm n type a-Si, 15 nm n + type a-Si and 80 nm ITO grown on a p + type Si substrate. On average, short circuit current density (Jsc ) increases from 19.64 mA cm −2 to 21.54 mA cm −2 with a relative improvement of 9.67% and efficiency increases from 6.09% to 7.09% with a relative improvement of 16.42% due to the presence of InN NPs. Reflectance and internal/external quantum efficiency (IQE/EQE) of the devices were also measured. Peak EQE was found to increase from 74.1% to 81.3% and peak IQE increased from 93% to 98.6% for InN NPs coated c-Si HIT cells. Lower reflection of light due to light scattering is responsible for performance enhancement between 400–620 nm while downshifted photons are responsible for performance enhancement from 620 nm onwards.