Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer. (3rd February 2016)

• Record Type: Journal Article
• Authors: Hiraya, Yoshihiro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, Takashi
• Is Part Of: Applied physics express. Volume 9:Number 3(2016:Mar.)
• Publication Date: 2016-02-03
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.9.035502
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We grew AlInP on two types of GaN substrate in order to transfer the wurtzite (WZ) structure to grown layers. An AlInP epitaxial layer grown on GaN with high-density stacking faults was obtained. X-ray diffraction and Raman scattering analyses indicate that the dominant crystal structure of the AlInP layer grown on GaN was WZ. Cathode luminescence measurements at 35 K revealed strong green emissions from the WZ AlInP layer, suggesting an energy band gap change from indirect to direct. These results demonstrate the potential of WZ AlInP as a new candidate for high-efficiency green emission material.