Complementary resistive switching of annealed Ti/Cu2O/Ti stacks. (15th March 2016)

• Record Type: Journal Article
• Authors: Wang, Hao-Yu; Jou, Shyankay; Huang, Bohr-Ran; Song, Wan-Jhen; Mao, Tzu-Zing
• Is Part Of: Applied physics express. Volume 9:Number 4(2016:Apr.)
• Publication Date: 2016-03-15
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.9.045801
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Ti/Cu2 O/Ti stacks with 25-nm-thick Cu2 O layers were produced by sputter deposition and lift-off processes utilizing three photolithographic masks. Subsequent annealing of the Ti/Cu2 O/Ti stacks at 250 °C in a vacuum induced interfacial reactions between the Ti and Cu2 O layers and converted the Ti/Cu2 O/Ti stacks to a Ti/TiO x /Cu/TiO x /Ti structure. This pentalayered stack resembled a pair of antiserial Ti/TiO x /Cu and Cu/TiO x /Ti resistive switching devices and, therefore, demonstrated complementary resistive switching behaviors.