Formation of accurate 1-nm gaps using the electromigration method during metal deposition. (4th February 2016)

• Record Type: Journal Article
• Authors: Naitoh, Yasuhisa; Wei, Qingshuo; Mukaida, Masakazu; Ishida, Takao
• Is Part Of: Applied physics express. Volume 9:Number 3(2016:Mar.)
• Publication Date: 2016-02-04
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.9.035201
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We investigate the origin of fabricated nanogap width variations using the electromigration method during metal deposition. This method also facilitates improved control over the nanogap width. A large suppression in the variation is achieved by sample annealing at 373 K during the application of bias voltages for electromigration, which indicates that the variation is caused by structural changes. This electromigration method during metal deposition for the fabrication of an accurate 1-nm gap electrode is useful for single-molecule-sized electronics. Furthermore, it opens the door for future research on integrated sub-1-nm-sized nanogap devices.