Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer. (18th February 2016)

• Record Type: Journal Article
• Authors: Taoka, Noriyuki; Capellini, Giovanni; von den Driesch, Nils; Buca, Dan; Zaumseil, Peter; Schubert, Markus Andreas; Klesse, Wolfgang Matthias; Montanari, Michele; Schroeder, Thomas
• Is Part Of: Applied physics express. Volume 9:Number 3(2016:Mar.)
• Publication Date: 2016-02-18
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.9.031201
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed ( v d ) deposition with v d 's of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed ( v d = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that v d is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices.