Cite
HARVARD Citation
Narita, T. et al. (n.d.). Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors. Applied physics express. p. . [Online].
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Narita, T. et al. (n.d.). Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors. Applied physics express. p. . [Online].