In situ monitoring of epitaxial ferroelectric thin-film growth. (9th June 2021)

• Record Type: Journal Article
• Authors: Sarott, Martin F; Gradauskaite, Elzbieta; Nordlander, Johanna; Strkalj, Nives; Trassin, Morgan
• Is Part Of: Journal of physics. Volume 33:Number 29(2021)
• Publication Date: 2021-06-09
• Subjects: ferroelectric -- in situ -- SHG -- multiferroic -- thin films -- XRD -- domain formation; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/abf979
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: In ferroelectric thin films, the polarization state and the domain configuration define the macroscopic ferroelectric properties such as the switching dynamics. Engineering of the ferroelectric domain configuration during synthesis is in permanent evolution and can be achieved by a range of approaches, extending from epitaxial strain tuning over electrostatic environment control to the influence of interface atomic termination. Exotic polar states are now designed in the technologically relevant ultrathin regime. The promise of energy-efficient devices based on ultrathin ferroelectric films depends on the ability to create, probe, and manipulate polar states in ever more complex epitaxial architectures. Because most ferroelectric oxides exhibit ferroelectricity during the epitaxial deposition process, the direct access to the polarization emergence and its evolution during the growth process, beyond the realm of existing structural in situ diagnostic tools, is becoming of paramount importance. We review the recent progress in the field of monitoring polar states with an emphasis on the non-invasive probes allowing investigations of polarization during the thin film growth of ferroelectric oxides. A particular importance is given to optical second harmonic generation in situ . The ability to determine the net polarization and domain configuration of ultrathin films and multilayers during the growth of multilayers brings new insights towards a better understanding of the physics of ultrathin ferroelectrics and further control of ferroelectric-based heterostructures for devices.