Non-volatile aluminum oxide resistive memory devices on a wrapping paper substrate. (28th July 2016)

• Record Type: Journal Article
• Authors: Jang, Jingon; Song, Younggul; Cho, Kyungjune; Kim, Youngrok; Lee, Woocheol; Yoo, Daekyoung; Chung, Seungjun; Lee, Takhee
• Is Part Of: Flexible and printed electronics. Volume 1:Number 3(2016)
• Publication Date: 2016-07-28
• Subjects: paper electronics -- flexibility -- resistive memory -- non-volatility; Flexible electronics -- Periodicals; Printed electronics -- Periodicals; Flexible electronics; Printed electronics; Electronic journals; Periodicals; 621.381
• DOI: 10.1088/2058-8585/1/3/034001
• Languages: English
• ISSNs: 2058-8585

Abstract

Abstract: We fabricated non-volatile resistive memory devices on a commercially available flexible paper substrate using physical vapor deposition methods in all of the fabrication steps. By using only evaporable component materials including aluminum oxide (Al2 O3 ) and metal electrodes, it has become possible to constitute the vertical stacking Al2 O3 active layer structure with metal electrodes in the memory devices without wet or crumpled damage on the paper substrate. The memory devices showed the typical unipolar switching characteristic with excellent electrical performances of low operating threshold voltage (∼3.2 V), high ON/OFF ratio (∼10 4 ), good reproducibility (∼500 endurance cycles), and stability (∼10 4 s of retention times). The outstanding flexibility of the paper substrate has made it possible to stably maintain the electrical properties of the memory devices both in flat and bent configurations (radius of 5 and 1 mm) without any serious degradation.